Chinese translation for "hole mobility"

空穴漂移率
空穴迁移率

Related Translations:

mobility:  n.1.可动性，活动性，能动性。2.灵活性，可变动性。3.【物理学】动性，迁移率；【化学】淌度；【军事】运动性，机动性。短语和例子the ionic mobility 离子迁移率[淌度]。n.群众。 mobility and nobility 〔戏谑语〕老百姓和贵族。

tooth mobility:  牙齿松动[度牙动度, 牙松动度牙可动性

downward mobility:  降职流动趋下流动趋下流动

economic mobility:  经济变动性

modal mobility:  模态导纳

social mobility:  社会流动社流

molecular mobility:  分子流动性

residential mobility:  居所流动

horizontal mobility:  横向流动

node mobility:  结点运移率

Example Sentences:

	1.	From which we can draw a conclusion that the hole mobility can experience a 15 % improvement in the strained sige layer while the electron mobility can experience a 48 . 5 % improvement in the strained si layer 通过比较实验我们可以获知,应变si材料中的电子迁移率相比于体si材料最大可有48 . 5 %的提高，而应变sige材料中的空穴迁移率相比于体si材料可有近15 %的提高。
	2.	Because of the great potential of sic mosfets and circuits , in this paper , the characteristics of 6h - sic pmosfets are studied systematically , emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly , the crystal structure of silicon carbide , the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented . the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation 研究了sic的晶体结构，分析了sic中杂质的不完全离化现象以及sic中空穴迁移率的拟和公式；用解一维poisson方程的方法分析了sicpmos空间电荷区的电特性；本论文重点分析了界面态分布和源漏串联电阻对sicpmos器件特性的影响。
	3.	For strained si pmosfets , the hole mobility is not only determined by the tensity of strain , but also related to the strain types , which are uniaxial compressive strain and biaxial tensile strain . when electric field is high enough , the hole mobility will be deteriorated in pmosfets under biaxial tensile strain , however , in the case of uniaxial compressive strain , the deterioration will never occur 经模型分析发现,应变硅pmosfet空穴迁移率与应力作用方式有如下关系:当横向电场较高( > 5 105v / cm )时,双轴张应力作用下的应变硅pmosfet的空穴迁移率将发生退化,而单轴压应力器件则不会受到影响。
	4.	With superior properties such as high thermal conductivity , high hole mobility , excellent chemical , thermal and radioactive stability , p - type diamond electrode can also greatly improve the stability of the devices , which complement the current electrode . the effect of boron concentration on the electronic properties of diamond films was investigated by raman spectroscopy , x - ray photoelectron spectroscopy and 结果表明，掺杂金刚石膜突出的光学及电学性质及优异的抗高温、抗腐蚀能力，机械强度大等优点，使其在作lppp发光器件的电极时，能克服一般电极在空气中易于氧化、稳定性差的缺点，大大改善器件稳定性，提高器件寿命。

Similar Words：

"hole man" Chinese translation, "hole man offence" Chinese translation, "hole match" Chinese translation, "hole micrometer" Chinese translation, "hole migration" Chinese translation, "hole model" Chinese translation, "hole month" Chinese translation, "hole mouth" Chinese translation, "hole narsipur" Chinese translation, "hole noise" Chinese translation